SEOUL, South Korea / RankWire.AI / – Samsung Electronics introduced its advanced memory and storage strategy for AI infrastructure at the 2026 OCP Global Summit. The company revealed its plans during the event held in San Jose, California, from October 12 to 15, outlining three core technology focus areas: high-performance memory, Compute Express Link-based memory expansion, and next-generation solid-state drives. Additionally, Samsung announced a collaborative CXL demonstration with Advanced Micro Devices, aiming to address memory limitations that hinder larger AI workloads.
Samsung centered its approach on enhancing speed, scalability, and data durability. The first pillar emphasizes high-performance memory, with the company showcasing customized high-bandwidth memory and HBM5, its eighth-generation HBM. The second pillar leverages CXL to expand memory capacity beyond what each server can typically support. The third concentrates on data storage and management through next-generation enterprise SSDs and storage software. Samsung asserts that these three initiatives collectively boost overall AI system efficiency.
The company linked this strategy to the increasing memory demands driven by AI agents and inference workloads, noting that larger models produce more data during inference and need greater memory capacity. Conventional server designs often restrict the memory accessible to each processor, but Samsung proposed CXL as a solution to overcome these constraints without overhauling entire systems. The company also highlighted key-value cache optimization, which enables AI models to reuse data that has already been processed, reducing redundant computations.
Samsung and AMD showcase CXL memory expansion
At the summit, Samsung and AMD jointly demonstrated a CXL-based memory expansion solution, allowing processors to share resources and scale capacity flexibly across AI systems. Samsung confirmed that the technology has been validated in real system environments. The two firms signed a memorandum of understanding in March 2026 to collaborate on next-generation AI memory and computing technologies. Furthermore, AMD Chief Executive Lisa Su visited South Korea on October 7 to discuss cooperation related to memory and foundry services.
Samsung also showcased CMM-D, its CXL-enabled DRAM memory module, configured in a memory pooling setup where multiple CXL memory units form a shared pool accessible to different systems as needed. Other exhibits included processing-in-memory technology, which performs calculations within memory chips to reduce data transfer. Samsung displayed 2-nanometer gate-all-around wafers alongside Groq LPU wafers, with Nvidia’s Groq 3 LPX system also featured among the displays.
Early validation opportunities for partners
During an executive session, Shim Ho-jun, Corporate Vice President and Head of Samsung’s Application Engineering Team, explained that expanding memory capacity and bandwidth is increasingly vital as AI models grow larger and inference workloads intensify. He added that Samsung is enhancing co-design and technical validation with global partners early in development stages to ensure memory products meet customer system needs before commercial release.
Samsung MAX Lab supports this initiative by enabling clients to test memory and storage under real AI workloads, validating technologies like PIM and next-generation SSDs prior to market launch. The company attended the summit as a Diamond Sponsor of the Open Compute Project event, following presentations at Nvidia GTC in March, COMPUTEX in June, and the Future of Memory and Storage conference in August. Samsung continues to emphasize that expanding memory capacity remains central to optimizing AI infrastructure performance.